Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1997-02-11
1999-11-02
Dang, Thi
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
H05H 100, H01L 21302
Patent
active
059763108
ABSTRACT:
Disclosed is a system, including both method and apparatus, for enhancing the plasma etching of a semiconductor wafer. The system enhances etchant uniformity while greatly reducing plasma contamination. Etching is performed in a housing for processing a semiconductor wafer having a wafer perimeter defined by an outer wafer edge, a top surface and a bottom surface. The plasma etch technique includes a plasma positioned substantially coplanar with and proximate,to the semiconductor wafer. The plasma has a perimeter defined by an outer plasma edge and extending beyond substantially all of the wafer perimeter. Provided is a means for introducing an inert gas between the wafer perimeter and the plasma perimeter so the inert gas may or may not hit the wafer's bottom surface. Plasma and wafer can each have a circular shape where the plasma and the wafer are proximate to each other. Further provided can be a plasma focussing device having an inner wall residing beside and encircling that portion of the plasma overlying the wafer, the device positioned coaxially with the wafer and having a diameter larger than the wafer diameter.
REFERENCES:
patent: 4392915 (1983-07-01), Zajac
patent: 4615755 (1986-10-01), Tracy et al.
patent: 4981722 (1991-01-01), Moller et al.
patent: 5000113 (1991-03-01), Wang et al.
Applied Materials Inc.
Dang Thi
Morris Birgit
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