Plasma etch system

Details Plasma etch system Plasma etch system

1995-05-25

1999-11-16

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118725, 118733, 118723R, 118723E, C23F 102

Patent

active

059850892

ABSTRACT:
This invention relates to a plasma reactor apparatus having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism and a thermally insulated wafer chuck. The vacuum insulated chuck also results in lower energy consumption and higher throughput.

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Yasuda, T. and Lucovsky, G., Dual-function remote plasma etching/cleaning system applied to selective etching of SiO.sub.2 and removal ofpolymeric residues, J. Vac. Sci. Technol.A 11(5), Sep./Oct. 1993, .COPYRGT. 1993 American Vacuum Society, pp. 2496-2507.

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