Plasma etch process for single-crystal silicon with improved sel

Details Plasma etch process for single-crystal silicon with improved sel Plasma etch process for single-crystal silicon with improved sel

1983-12-22

1984-08-28

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156657, 1566591, 156662, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044682859

ABSTRACT:
A plasma etching composition is set forth which comprises chlorine in an amount from about 40% to about 90%, a shape modifier species in an amount from about 10% to about 60%, and an etching selectivity enhancer in an amount sufficient to render the composition at least about 10 times as effective for etching a wafer as for etching a masking layer, the above percents being by mole. The composition is useful for plasma etching of a semiconductor wafer masked with a masking layer having an opening therethrough exposing a portion of the wafer which is to be etched in order to form a depression of a desired depth. This allows depressions of increased depth to be formed in wafers without increasing the thickness of the masking layer.

REFERENCES:
patent: 4069096 (1978-01-01), Reinberg et al.
patent: 4255230 (1981-03-01), Zajac

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