Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-24
2006-10-24
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21218, C257SE21577, C257SE21313, C257SE21600, C257SE21024
Reexamination Certificate
active
07125796
ABSTRACT:
A process is provided for fabricating a via52between bonded wafers without undercutting an organic bonding material32. The process for forming the via52in a structure including a dielectric material14and an organic bonding material32, comprises forming a resist material42on the dielectric layer14and etching through the dielectric layer14and the organic bonding material32with 60CF4/20Ar/60CHF3/20N2. The resist may then be removed with an anisotropic high density oxygen plasma.
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Dauksher William J.
Le Ngoc V.
Weston Donald F.
Dinh Thu-Huong
Lindsay, Jr. Walter
Motorola Inc.
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