Plasma etch process

Details Plasma etch process Plasma etch process

1986-06-09

1987-07-07

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, B44C 122

Patent

active

046785400

ABSTRACT:
In an aluminum etch process using SiCl.sub.4 in a plasma reactor, edge profile is controlled by adding predetermined amounts of nitrogen and chlorine. The resulting aniosotropic etch causes walls to have a 60.degree.-90.degree. angle with respect to the substrate. Edge profile is further controlled by tapering the photoresist mask, e.g. by baking

REFERENCES:
patent: 4373990 (1983-02-01), Porter
patent: 4484979 (1984-11-01), Stocker
patent: 4487652 (1984-12-01), Almgren
patent: 4522681 (1985-06-01), Gorowitz et al.
patent: 4595452 (1986-06-01), Landau et al.

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