Plasma etch process

Details Plasma etch process Plasma etch process

1992-10-09

1995-11-21

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 79, H01L 2100

Patent

active

054683394

ABSTRACT:
An improved SiO.sub.x etch which employs CHF.sub.3, N.sub.2 and a light mass cooling gas in total pressure on the order of 3000 mT in a confined plasma reactor. High aspect ratios at least 10:1 are obtainable.

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