Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-12-12
1990-06-12
Schor, Kenneth M.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505728, 156643, 156652, 1566591, 427 63, H01L 21308, H01L 3900
Patent
active
049333186
ABSTRACT:
A method of manufacturing a thin film of an oxidic superconducting material in accordance with a pattern, in which a pattern is manufactured by means of etching using reactive ions and a mask of aluminium oxide or silicon oxide, said method enabling patterns having line widths smaller than 2 .mu.m to be manufactured with great accuracy without influencing the composition of the superconducting thin film in such a manner that the superconducting properties deteriorate.
REFERENCES:
patent: 4560435 (1985-12-01), Brown et al.
patent: 4657844 (1987-04-01), Shu et al.
patent: 4683024 (1987-07-01), Miller et al.
patent: 4687543 (1987-08-01), Bowker
patent: 4690729 (1987-09-01), Douglas
de Vries et al., Preparation Patterning and Properties of Thin YBa.sub.2 Cu.sub.3 O.sub.7-8 Films, Applied Physics Letters, 30 May 1988, 1904-1906.
Matsui et al., Reactive Ion Beam Etching of Y-Ba-Cu-O Superconductors, Applied Physics Letters, 4 Jan. 1988, 69-71.
Mankiewich et al., Reproducible Technique for Fabication of Thin Films of High Transition Temperative Superconductors, Applied Physics Letters, 23 Nov. 1987, 1753-1755.
Bruckner John J.
Schor Kenneth M.
Spain Norman N.
U.S. Philips Corporation
LandOfFree
Plasma etch of masked superconductor film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma etch of masked superconductor film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etch of masked superconductor film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-617243