Plasma etch isotropy control

Details Plasma etch isotropy control Plasma etch isotropy control

1989-05-01

1989-12-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156653, 156657, 1566591, 156345, 20419237, 204298, B44C 122, C03C 1500, C03C 2506

Patent

active

048895881

ABSTRACT:
A tapered profile is obtained in oxide etched in a plasma glow discharge by switching the RF power between the side and lower electrodes in a tri-electrode reactor. The etch is isotropic while the RF power is applied to the side electrode and is anisotropic when the RF power is applied to the lower electrode.

REFERENCES:
patent: 4464223 (1984-08-01), Gorin
patent: 4484978 (1984-11-01), Keyser
patent: 4572759 (1986-02-01), Benzing
patent: 4729815 (1988-03-01), Leung

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