Plasma etch equipment

Details Plasma etch equipment Plasma etch equipment

1994-09-12

1996-12-24

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723MW, 118723MR, H01L 21302

Patent

active

055870392

ABSTRACT:
A microwave powered electron cyclotron resonance reactor employing a low pressure, high electron density plasma for rapid oxide etching using hydrogen and argon incorporates an alumina-coated quartz dielectric microwave window to couple microwave energy into an etch chamber while preventing oxygen in the window from contaminating the etch chamber or its contents. The etch chamber side of the dielectric microwave window is coated with alumina.

REFERENCES:
patent: 5024716 (1991-06-01), Sato
patent: 5038712 (1991-08-01), Fujiyama
patent: 5111111 (1992-05-01), Stevens et al.
patent: 5234526 (1993-08-01), Chen et al.
patent: 5376223 (1994-12-01), Salimian et al.

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