Plasma etch end point detection process

Details Plasma etch end point detection process Plasma etch end point detection process

1997-07-22

1999-03-02

Chapman, John E.

Measuring and testing

Gas analysis

By vibration

73597, 216 59, G01H 500, G01N 2902, H01L 213065

Patent

active

058774076

ABSTRACT:
A method for determining the endpoint of a plasma etch process is disclosed. The endpoint of the plasma etch process is determined using an acoustic cell attached to an exhaust port on a reaction chamber of a plasma reactor. At least a portion of the gas from the reaction chamber flows into the acoustic cell during the plasma etch process. Acoustic signals are periodically transmitted through the gas flowing in the acoustic cell and a first velocity for the acoustic signals associated with etching a first material layer formed on a substrate is determined. Thereafter, the endpoint of the plasma etch step is determined when the first velocity changes to a second velocity associated with etching the first material layer through its thickness to its interface with an underlying material layer. The gas from the reaction chamber optionally flows through a compressor prior to flowing into the acoustic cell. The compressor increases the pressure of the gas that flows into the acoustic cell.

REFERENCES:
patent: 5392635 (1995-02-01), Cadet et al.
patent: 5501098 (1996-03-01), Cadet et al.

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