Plasma etch chemistry for anisotropic etching of silicon

Details Plasma etch chemistry for anisotropic etching of silicon Plasma etch chemistry for anisotropic etching of silicon

1984-02-01

1985-06-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 204192E, 252 791, 427 38, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

045212759

ABSTRACT:
A plasma etch chemistry which allows a near perfectly vertical etch of silicon is disclosed. A Cl-containing compound such as BCl.sub.3 has Br.sub.2 added to it, readily allowing anisotropic etching of silicon. This is due to the low volatility of SiBr.sub.4. The silicon surface facing the discharge is subjected to ion bombardment, allowing the volatilization (etching) of silicon as a Si-Cl-Br compound. The Br which adsorbs on the sidewalls of the etched silicon protects them from the etching. This new plasma etch chemistry yields a very smooth etched surface, and the etch rate is relatively insensitive to the electrical conductivity of the silicon.

REFERENCES:
patent: 4162185 (1979-07-01), Coburn et al.
patent: 4208241 (1980-06-01), Harshbarger
patent: 4211601 (1980-07-01), Mogab
patent: 4314875 (1982-02-01), Flamm
patent: 4450042 (1984-05-01), Purdes

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