Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-11-10
2000-02-22
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438 5, H01L 2329
Patent
active
06028014&
ABSTRACT:
Apparatus and method for forming silicon dioxide films on semiconductors using oxygen plasma and TEOS includes mass spectrometric and/or optical emission spectrometric analyses of the plasma to control selected operating parameters in order to increase the ratio of molecular oxygen cations to atomic oxygen cations present in the plasma, thereby to reduce the resultant concentrations of carbon and hydrogen atoms contained in the oxide film thus formed. Oxide films of high dielectric properties are identified as having concentrations of carbon not greater than about 1 ppm, and hydrogen not greater than about 10E13 cm-3. Bond energies among atoms of carbon, oxygen, hydrogen, and silicon in TEOS are analyzed to indicate requisite operational parameters in a plasma including oxygen and TEOS for forming oxide films of superior dielectric properties.
REFERENCES:
Crowell, et al, Model Studies of Dierectri Thin Film Growth: Chemical Vapor Deposition of SiO.sub.2, J. Vac. Sci. Technology. A 8 (3), May/Jun. 1990, pp. 1864-1870.
Raupp, et al., The Role of Oxygen Excitation and Loss in Plasma-Enhanced Deposition of Silicon Dioxide from Tetraethylorthosilicate, J. Vac. Sci. Technology B 10 (1), Jan./Feb. 1992, pp. 37-45.
Stout, et al., Monte Carol Simulation of Surface Kinetics During Plasma Enhanced Chemical Vapor Deposition of SiO.sub.2 Using Oxygen/Tetraethoxysilane Chemistry, J. Vac. Sci. Technology A, vol. 11, No. 5, Sep./Oct. 1993, pp. 2562-2571.
Dobkin, et al., Mechanics of Deposition of SiO.sub.2 from TEOS and Related Organosilicon Compounds and Ozone, J. Electrochemical Soc. vol. 142, No. 7, Jul. 1995, pp. 2332-2340.
Grapperhaus, et al., A Semianalytic Radio Frequency Sheath Model integrated into a Two-Dimensional Hybrid Model for Plasma Processing Reactors, J. Appl. Phys. 81 (2), Jan. 15, 1997, pp. 569-577.
Chaudhuri Olik
Duy Mai Anh
LSI Logic Corporation
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