Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-11
2006-07-11
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S003000
Reexamination Certificate
active
07074713
ABSTRACT:
An etch stop layer located over a plasma enhanced nitride (PEN) layer. Interlayer dielectric material is then formed over the etched stop layer. The etch stop layer is used as an etch stop for etching openings in the interlayer dielectric. In some embodiments, integrated circuits built with the PEN layer may include transistors with improved drive current at a given leakage current. Also, integrated circuits with the PEN layer may exhibit reduced parasitic capacitance.
REFERENCES:
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patent: 6100559 (2000-08-01), Park
patent: 6713873 (2004-03-01), O'Loughlin
patent: 6881351 (2005-04-01), Grynkewich et al.
Chen Jian
Filipiak Stanley M.
Jeon Yongjoo
Stephens Tab A.
Dang Phuc T.
Dolezal David G.
Freescale Semiconductor Inc.
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