Plasma-enhanced flash process

Details Plasma-enhanced flash process Plasma-enhanced flash process

1996-12-20

1999-02-09

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

134 11, 134 12, H01L 2100

Patent

active

058694013

ABSTRACT:
A method in a plasma processing chamber, the chamber being employed for processing a substrate, for removing corrosive species from the plasma processing chamber after the substrate is processed. The method includes introducing a flash source gas comprising an oxidizing agent such as oxygen into the plasma processing chamber. The method further includes performing, a flash process, including striking a plasma in the plasma processing chamber with the flash source gas, thereby permitting oxygen species in the plasma to reduce a concentration of the corrosive species in the plasma processing chamber.

REFERENCES:
patent: 5681424 (1997-10-01), Saito et al.
patent: 5685916 (1997-11-01), Ye et al.
patent: 5700327 (1997-12-01), Babacz et al.

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