Plasma enhanced deposition of semiconductors

Details Plasma enhanced deposition of semiconductors Plasma enhanced deposition of semiconductors

1985-10-28

1986-09-02

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 2510

Patent

active

046094245

ABSTRACT:
Semiconductor thin films are produced using plasma assisted chemical vapor deposition on alkali halide single crystal substrates. Deposition is formed at relatively low temperatures so that sublimation of the substrate is not a problem. The invention process permits at high rate deposition of high quality semiconductors.

REFERENCES:
patent: 3047438 (1962-07-01), Marinace
patent: 3158511 (1964-11-01), Robillard
patent: 4066037 (1978-01-01), Jacob
patent: 4223048 (1980-09-01), Engle
patent: 4262631 (1981-04-01), Kubacki
patent: 4268711 (1981-05-01), Gurev
patent: 4309240 (1982-01-01), Zateres
patent: 4421592 (1983-12-01), Shuskus et al.

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