Plasma enhanced chemical vapor deposition (PECVD) method of form

Details Plasma enhanced chemical vapor deposition (PECVD) method of form Plasma enhanced chemical vapor deposition (PECVD) method of form

1999-06-03

2000-12-05

Meeks, Timothy

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4271263, 42725529, C23C 1640

Patent

active

061563951

ABSTRACT:
A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

REFERENCES:
patent: 4687560 (1987-08-01), Tracey et al.
Deutschmann et al., Advanced Materials, vol. 6, No. 5, pp. 392-395, 1994 (no month).

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