Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1995-08-02
1998-05-05
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427249, 427122, B05D 306, C23C 1600
Patent
active
057471185
ABSTRACT:
A chemical transport process which is enhanced by a plasma formed in a substantially oxygen free hydrogen environment for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 .mu.m/hr. The process, performed at 80 to 180 Torr and a current density of about 1 amp/cm.sup.2 of substrate, can be scaled to deposit films on large areas. The invention further comprises doped diamond films produced by the process, said product having a well-faceted microcrystalline structure with x-ray diffraction pattern and Raman spectra indicative of a predominately diamond structure. The doped diamond films can function as n-type and p-type semiconductors.
REFERENCES:
patent: 3175885 (1965-03-01), Brinkman et al.
patent: 4816291 (1989-03-01), Desphandey et al.
patent: 4961958 (1990-10-01), Desphandey et al.
patent: 5051785 (1991-09-01), Beetz, Jr. et al.
patent: 5104634 (1992-04-01), Calcote
patent: 5126206 (1992-06-01), Gang et al.
patent: 5186973 (1993-02-01), Gang et al.
patent: 5382809 (1995-01-01), Nishibayashi et al.
John C. Angus et al., Growth of Diamond Seed Crystals by Vapor Deposition, Journal of Applied Physics, vol. 19, No. 6, pp. 2915-2922.
B.V. Derjaguin, et al., Filamentary Diamond Crystals, Journal of Crystal Growth 2 (1968), pp. 380-384.
C.V. Desphandey, et al., Diamond and diamondlike films: Deposition processes and properties, J.Vac. Sci. Technol. A, vol. 7, No. 3, May/Jun. 1989, pp. 2294-2302.
Naoji Fujimori, et al., Properties of Boron-Doped Epitaxial Diamond Films, Japanese Journal of Applied Physics, vol.29, No. 5, May 1990, pp. 824-827.
M.W. Geis, et al., Diamond Cold Cathode, IEEE Electron Device Letters, vol. 12, No. 8, Aug. 1991, pp. 456-459.
Michael W. Geis, Diamond Transistor Performance and Fabrication, Proceedings of the IEEE, vol. 79, No. 5, May 1991, pp. 669-676.
Michael W. Geis, et al., Diamond Film Semiconductors, Scientific American, Oct. 1992, pp. 84-89.
M.W. Geis, et al., High-conductance, low-leakage diamond Schottky diodes, Appl. Phys. Lett., vol. 63, No. 7, Aug. 1993, pp. 952-954.
Gennady Sh. Gildenblat, et al., The Electrical Properties and Device Applications of Homoepitaxial and Polycrystalline Diamond Films, Proceedings of the IEEE, vol. 79, No. 5, May 1991, pp. 647-668.
Paul R. de la Houssaye, Hall mobility and carrier concentration versus temperature for type IIa natural insulating diamond doped with boron by ion implantation, J. Appl. Phys., vol. 71, No. 7, Apr. 1992, pp. 3220-3224.
Mutsukazu Kamo, et al., Diamond Synthesis from Gas Phase in Microwave Plasma, Journal of Crystal Growth, vol. 62 (1983), pp. 642-644.
Michael A. Kelly, et al., Diamond growth by a new method based upon sequential exposure to atomic carbon and hydrogen, Appl. Phys. Lett., vol. 60, No. 20, May 1992, pp. 2502-2504.
Hideo Kiyota, et al., Fabrication of Metal-Insulator-Semiconductor Devices Using Polycrystalline Diamond Film, Japanese Journal of Applied Physics, vol. 30, No. 12A, Dec. 1991, pp. L2015-L2017.
Kazuaki Kurihara, et al., High rates synthesis of diamond by dc plasma jet chemical vapor deposition, Appl. Phys. Lett., vol. 52, No. 6, Feb. 1988, pp. 437-438.
Seiichiro Matsumoto, et al., Vapor Deposition of Diamond Particles from Methane, Japanese Journal of Applied Physics, vol. 21, No. 4, Apr. 1982, pp. L183-L185.
Seiichiro Matsumoto, et al., Growth of diamond particles from methane-hydrogen gas, Journal of Materials Science, 17, (1982), pp. 3106-3112.
Seiichiro Matsumoto, Chemical vapour deposition of diamond in RF glow discharge, Journal of Materials Science Letters, 4, (1985), pp. 600-602.
Morito Matsuoka, et al., Diamond synthesis by sputtering, J. Vac. Sci. Technol. A., vol. 11, No. 6, Nov./Dec. 1993, pp. 2994-3000.
Juan Manuel Mendez, et al., Optical properties of amorphous carbon thin films prepared by plasma deposition in a graphite hollow cathode, Thin Solid Films, 220 (1992), pp. 125-131.
K. Miyata, et al., Metal/intrinsic diamond/semiconducting diamond junction diodes fabricated from polycrystalline diamond films, J. Appl. Phys., vol. 73, No. 9, May 1993, pp. 4448-4456.
Ken Okano, et al., Synthesis of n-Type Semiconducting Diamond Film using Diphosphorus Pentaoxide as the Doping Source, Appl. Phys. A, vol. 51, (1990, pp., 344-346.
Ken Okano, et al., Characterization of semiconducting diamond film and its application to electronic devices, Thin Solid Films, vol. 206, (1991), pp. 183-187.
Ken Okano, et al., Characterization of Boron-Doped Diamond Film, Japanese Journal of Applied Physics, vol. 28, No. 6, Jun. 1989, pp. 1066-1071.
K. Okumura, et al., Lithium doping and photoemission of diamond thin films, Appl. Phys. Lett., vol. 57, No. 18, Oct. 1990, pp. 1907-1909.
W. Piekarczyk, et al., Diamond Deposition by Chemical Vapor Transport with Hydrogen in a Closed System, Journal of Crystal Growth, vol. 106 (1990), pp. 279-293.
K.V. Ravi, et al., Silicon on Insulator Technology Using CVD Diamond Films, The Electrochemical Society Proceedings, vol. 89, No. 12, pp. 24-37.
J.L. Robertson, et al., Epitaxial Growth of Diamond Films on Si(111) at Room Temperature by Mass-Selected Low-Energy C+ Beams, Science, vol. 243, Feb. 1989, pp. 1047-1050.
Atsuhito Sawabe, et al., Growth of diamond thin films by electron assisted chemical vapor deposition, Appl. Phys. Lett., vol. 46, No. 2, Jan. 1985, pp. 146-147.
Atsuhito Sawabe, et al., Growth of Diamond Thin Films in a DC Discharge Plasma, Applied Surface Science, 33/34, (1988), pp. 539-545.
B.V. Spitsyn, et al., Vapor Growth of Diamond on Diamond and Other Surfaces, Journal of Crystal Growth, vol. 52, (1981), pp. 219-226.
M.C. Salvadori, et al., Diamond synthesis by microwave plasma chemical vapor deposition using graphite as the carbon source, Appl. Phys. Lett., vol. 59, No. 19, Nov. 1991, pp. 2386-2388.
G.S. Sandhu, et al., Doping of diamond by coimplantation of carbon and boron, Appl. Phys. Lett., vol. 55, No. 14, Oct. 1989, pp. 1397-1399.
B. Singh, et al., Hollow cathode plasma assisted chemical vapor deposition of diamond, Appl. Phys. Lett., vol. 52, No. 20, May 1988, pp. 1658-1660.
Atsuhito Sawabe, et al., Growth of diamond thin films by electron-assisted chemical vapour deposition and their characterization, Thin Solid Films, 137, (1986), pp. 89-99.
Hiromu Shiomi, et al., Epitaxial Growth of High Quality of Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method, Japanese Journal of Applied Physics, vol. 29, No. 1, Jan. 1990, pp. 34-40.
Hiromu Shiomi, et al., Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films, Japanese Journal of Applied Physics, vol. 28, No. 12, Dec. 1989, pp. L2153-L2154.
Robert J. Trew, et al., The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Applications, Proceedings of the IEEE, vol. 79, No. 5, May 1991, pp. 598-620.
W. Tsai, et al., Diamond MESFET Using Ultrashallow RTP Boron Doping, IEEE Electron Device Letters, vol. 12, No. 4, Apr. 1991, pp. 157-159.
C. Wang, et al., Cold Field Emission From CVD Diamond Films Observed in Emission Electron Mlcroscopy, Electronics Letters, vol. 27, No. 16, Aug. 1991, pp. 1459-1461.
Max N. Yoder, Diamond: Its Impact on Electronics, Naval Research Reviews, 1992, pp. 17-21.
Carl R. Zeisse, et al., An Ion-Implanted Diamond Metal-Insulator-Semiconductor Field-Effect Transistor, IEEE Electron Device Letters, vol. 12, No. 11, Nov. 1991, pp. 602-604.
X.K. Zhang, et al., Boron Doping of Diamond Films by B.sub.2 O.sub.3 Vaporization, Phys. Stat. Sol. (a), 133, (1992), pp. 377-383.
Bunshah Rointan F.
Doerr Hans J.
Jou Shyankay
King Roy V.
Kleinberg Marvin H.
Lerner Marshall A.
Ram Michael J.
The Regents of the University of California
LandOfFree
Plasma enhanced chemical transport process for forming diamond f does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma enhanced chemical transport process for forming diamond f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma enhanced chemical transport process for forming diamond f will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-51577