Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2007-03-06
2007-03-06
Chen, Bret (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S576000
Reexamination Certificate
active
10699226
ABSTRACT:
A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.
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Kellock Andrew J.
Kim Hyung-jun
Rossnagel Stephen M.
Aker David
Chen Bret
International Business Machines - Corporation
Morris Daniel P.
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