Plasma dry etch to produce atomically sharp asperities useful as

Details Plasma dry etch to produce atomically sharp asperities useful as Plasma dry etch to produce atomically sharp asperities useful as

1992-05-15

1994-04-12

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566611, 156662, 445 50, 445 51, H01L 2100

Patent

active

053022386

ABSTRACT:
An in situ plasma dry etching process for the formation of automatically sharp cold cathode emitter tips for use in field emission displays in which i) a mask layer is deposited on a substrate, ii) a photoresist layer is patterned superjacent the mask layer at the sites where the emitter tips are to be formed, iii) the mask is selectively removed by plasma etching, iv) after which the substrate is etched in the same plasma reacting chamber, thereby creating sharp electron emitter tips.

REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4639288 (1987-01-01), Price et al.
patent: 4741799 (1988-05-01), Chen et al.
patent: 4766340 (1988-08-01), van der Mast et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 4968382 (1990-11-01), Jacobson et al.
patent: 4968585 (1990-11-01), Albrecht et al.
patent: 4986877 (1991-01-01), Tachi et al.
patent: 5064396 (1991-11-01), Spindt et al.
patent: 5066358 (1991-11-01), Quate et al.
patent: 5082524 (1992-01-01), Cathey
patent: 5094712 (1992-03-01), Becker et al.
patent: 5126287 (1992-06-01), Jones
patent: 5201992 (1993-04-01), Marcus et al.
Keiichi Betsui, "Fabrication and Characteristics of Si Field Emitter Arrays" Technical Digest of IVMC, 1991, pp. 26-29.
Marcus et al., "Formation of Silicon Tips with 1 nm Radius", Appl. Physics Letter, vol. 56, No. 3, Jan. 15, 1990.
Hunt et al., "Structure and Electrical Characteristics of Silicon Field-Emission Microelectronic Devices", IEEE Transaction on Electron Devices, vol. 38, No. 10, Oct. 1991.
McGruer et al., "Oxidation-Sharpened Gated Field Emitter Array Process", IEEE Transactions on Electron Devices, vol. 38, No. 10, Oct. 1991.
Farooqui et al., "Microfabrication of Submicron Nozzles in Silicon Nitride", Journal of Microelectromechanical Systems, vol. 1, No. 2, Jun. 1992, pp. 86-88.

Affiliated with

Also associated with

Rating

Plasma dry etch to produce atomically sharp asperities useful as does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma dry etch to produce atomically sharp asperities useful as, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma dry etch to produce atomically sharp asperities useful as will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2096058