Plasma dry cleaning of semiconductor processing chambers

Details Plasma dry cleaning of semiconductor processing chambers Plasma dry cleaning of semiconductor processing chambers

1995-05-17

1997-10-14

Pyon, Harold

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 11, 134 13, 1566261, 216 60, 356316, B08B 700

Patent

active

056767595

ABSTRACT:
The plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber.
When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be located upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.

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