Plasma development process controller

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156643, 356316, 356437, 430325, 430328, B44C 122, C03C 1500, C03C 2506

Patent

active

042630894

ABSTRACT:
End point detection in developing photoresist is accomplished by monitoring the output of a photodetector and sensing a plateau in the output.

REFERENCES:
patent: 4198261 (1980-04-01), Busta et al.
patent: 4201579 (1980-05-01), Robinson et al.
Kodak Microelectronics Seminar, 1976, A Study of the Optical Emission from a RF Plasma During Semiconductor Etching, by Harshbarger et al., pp. 1-24.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma development process controller does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma development process controller, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma development process controller will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-556147

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.