Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-02-23
1997-10-28
Gorgos, Kathryn L.
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 75, 216 76, 216 77, H05H 100
Patent
active
056814860
ABSTRACT:
The invention provides a method of removing surface scale from a titanium or titanium alloy substrate. The method includes the steps of heating the substrate to a temperature in the range from about 100.degree. C. to about 600.degree. C., and thereafter subjecting the heated surface to a plasma formed from a gas selected from the group of consisting of CF.sub.4 and SF.sub.6. The plasma reacts with the surface scale, removing the scale, without attacking the underlying crystalline titanium or titanium alloy. Properly controlled, the plasma reaction terminates when the plasma has penetrated the scale and encounters the underlying crystalline metal. As a result, the method of the invention is capable of uniform removal of the entire surface scale of a crystalline titanium-containing substrate, without intergranular attack of the substrate.
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Caplus 1995: 974;077 No Month Available.
Goode, Jr. Herbert S.
Nielsen Jean A.
Nitzsche Larry E.
Gorgos Kathryn L.
Mayekar Kishor
The Boeing Company
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