Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1996-04-02
1999-09-07
Russel, Jeffrey E.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
118723MP, 118723MR, 427574, 427575, 427579, H01L 2131, H01L 21316, H05H 118, H05H 130
Patent
active
059484853
ABSTRACT:
A plasma generating gas and a reactive gas are fed into a vacuum container. A magnetic field and microwaves for plasma generation are applied to the vacuum container, whereupon plasma is generated by ECR, and whereupon, for example, an SiO.sub.2 or SiOF film is formed on aluminum wiring. In the initial phase of film deposition, the level of the radio-frequency power for plasma lead-in applied to the stage is adjusted, for example, to zero (first value includes zero) in advance. Then, after the SiO.sub.2 or SiOF film has been deposited to a thickness of tens of nanometers, for example, the radio-frequency power for plasma lead-in is adjusted to a normal power level (second value) and applied to the stage. Thereupon, an intensive anisotropic plasma is generated, and a potential distribution corresponding to the self-bias is formed in the plane direction of the wafer. Since the thin SiO.sub.2 film is formed on the wafer surface, however, the voltage applied to any existing gate oxide film is lowered by this insulating film. Thus, the gate oxide film can be prevented from being damaged.
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Amano Hideaki
Katagiri Genichi
Toraguchi Makoto
Russel Jeffrey E.
Tokyo Electron Limited
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