Plasma deposition apparatus and method for making...

Details Plasma deposition apparatus and method for making... Plasma deposition apparatus and method for making...

2009-04-30

2010-12-28

Meeks, Timothy H (Department: 1715)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S457000, C427S578000

Reexamination Certificate

active

07858158

ABSTRACT:
A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.

REFERENCES:
patent: 2003/0027054 (2003-02-01), Ball et al.
patent: 2004/0115936 (2004-06-01), DePetrillo et al.

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