Plasma deposition apparatus and deposition method utilizing...

Details Plasma deposition apparatus and deposition method utilizing... Plasma deposition apparatus and deposition method utilizing...

2011-04-12

2011-04-12

Meeks, Timothy H (Department: 1715)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S248100

Reexamination Certificate

active

07923076

ABSTRACT:
A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle θ2of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.

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China Patent Office, Office Action, Patent Application Serial No. 200610126347.6, Jan. 24, 2011, China.

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