Plasma damage protection circuit for a semiconductor device

Details Plasma damage protection circuit for a semiconductor device Plasma damage protection circuit for a semiconductor device

2007-03-27

2007-03-27

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S320000

Reexamination Certificate

active

10195706

ABSTRACT:
A protection device and a method for manufacturing integrated circuit devices protect against plasma charge damage, and related charge damage during manufacture. The protection device comprises a dynamic threshold, NMOS/PMOS pair having their respective gate terminals coupled to the semiconductor bulk in which the channel regions are formed. With proper metal connection, the structure protects against plasma charge damage on the integrated circuit device during manufacture, and can also be operated to protect against abnormal voltages during operation of the circuit.

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