Plasma CVD process for metal films and metal nitride films

Details Plasma CVD process for metal films and metal nitride films Plasma CVD process for metal films and metal nitride films

1997-12-19

2000-03-21

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427535, 427571, 427253, 427124, 4271261, 20419215, 20429811, B05D 306, C23C 1600

Patent

active

060400218

ABSTRACT:
A plasma CVD process for a metal film made from Ti or the like and a formation process of a metal nitride film made from TiN or the like. Each process solves problems on asymmetry of a film shape at an opening portion of a contact hole, corrosion of an underlaying material layer, remaining halogen in the film, and peeling of the film. In the plasma CVD using a mixed gas containing TiCl.sub.4, H.sub.2 and Ar, species for forming a Ti film is efficiently ionized and the Ti ions thus generated are made incident on a substrate to be processed in the direction substantially perpendicular to the substrate, to thus form a metal film being good in coverage. A metal nitride film having a specific thickness is formed by repeating the step of forming such a metal film and the step of nitriding the metal film by plasma nitriding. The metal film or the metal nitride film is formed by vertically incident metal ions in such a manner as to be symmetrical, and to be thick at a bottom portion and thin at a side wall of the contact hole.

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patent: 5529670 (1996-06-01), Ryan et al.
patent: 5595784 (1997-01-01), Kaim et al.
patent: 5716870 (1998-02-01), Foster et al.
patent: 5747384 (1998-05-01), Miyamoto

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