Plasma CVD process for forming amorphous silicon thin film

Details Plasma CVD process for forming amorphous silicon thin film Plasma CVD process for forming amorphous silicon thin film

1994-07-19

1995-08-01

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427579, 427109, B05D 306

Patent

active

054378958

ABSTRACT:
A process for forming a thin film of amorphous silicon of a uniform thickness on a relatively large glass plate. The process comprising forming a thin film of amorphous silicon on an insulating substrate by a plasma enhanced chemical vapor deposition process while intermittently generating a high frequency discharge. The duration of each discharge is set shorter than the time period necessary for the DC bias voltage, which is generated on the high frequency-applying electrode side, to attain a saturated value.

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