Plasma CVD process and semiconductor device having metal film fo

Details Plasma CVD process and semiconductor device having metal film fo Plasma CVD process and semiconductor device having metal film fo

1996-12-20

1999-10-05

Jones, Deborah

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427569, 427 8, 438680, 428689, 428450, H05H 129

Patent

active

059620846

ABSTRACT:
A plasma CVD process of forming a metal film containing a residual halogen element in a small amount and a high reliability semiconductor device fabricated by the process. The plasma CVD process includes the step of forming a metal film on a substrate to be processed, using a mixed gas containing a metal halide and hydrogen, wherein the plasma CVD process adopts a plasma CVD condition which is determined in such a manner that emission spectrum intensities of a plasma of the mixed gas are measured; and a mixing ratio of the metal halide in the mixed gas is set to be not more than a value at which a decreasing rate, depending on mixing of the metal halide, of an emission spectrum intensity of a hydrogen spectral line is rapidly changed and also at which an increasing ratio, depending on mixing of the metal halide, of an emission spectrum intensity of a halogen element is rapidly changed.

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