Plasma CVD method of producing a gradient layer

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

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427575, 427576, 427578, 427579, B05D 306

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056436386

ABSTRACT:
The invention relates to a plasma CVD method for producing a gradient layer wherein the layer gradient is produced in the direction of layer growth by changing at least one plasma power parameter during the coating process. According to the invention, thin gradient layers are generated with high precision by supplying the plasma power in a pulsed manner and adjusting the layer gradient by changing the plasma power parameters of pulse amplitude, pulse duration and/or pulse interval.

REFERENCES:
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patent: 4987005 (1991-01-01), Suzuki et al.
patent: 5217749 (1993-06-01), Denton et al.
patent: 5295220 (1994-03-01), Heming et al.
patent: 5369722 (1994-11-01), Heming et al.
"Kinetics and Compositional Dependence on the Microwave Power and SiH.sub.4 /N.sub.2 Flow Ratio of Silicon Nitride Deposited by Electron Cyclotron Resonance Plasmas" by Hernandez et al in J. Electrochemical Soc., 141, 1994, pp. 3234 to 3237.
"Advances in Basic and Applied Aspects of Microwave Plasma Polymerization" by M. R. Wertheimer in Thin Solid Films, 115, 1984, pp. 109 to 124.
"Thick Coatings of Doped Synthetic Silica Glass by Plasma Impulse CVD" by Kersten et al, Journal of the Ceramic Society of Japan, 99 (10), 1991, pp. 894 to 902.

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