Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-06-29
2008-11-18
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257S348000
Reexamination Certificate
active
07452829
ABSTRACT:
In a process of forming a silicon oxide film116that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.
REFERENCES:
patent: 4917044 (1990-04-01), Yau
patent: 5243202 (1993-09-01), Mori
patent: 5403772 (1995-04-01), Zhang
patent: 5472825 (1995-12-01), Sayka
patent: 5571578 (1996-11-01), Kaji
patent: 6015762 (2000-01-01), Yamazaki
patent: 6103992 (2000-08-01), Noddin
patent: 6183816 (2001-02-01), Yamazaki
patent: 04-123424 (1992-04-01), None
patent: 06-084888 (1994-03-01), None
patent: 06-318552 (1994-11-01), None
Z. Jian-ming, “Optimization of Glow Discharge Deposition of Amorphous Silicon Solar Cells”, 1988, 20th IEEE Photovoltaic Specialists Conference, vol. 1, pp. 296-300.
Hiroki Masaaki
Sakama Mitsunori
Yamazaki Shunpei
Fish & Richardson P.C.
Lee Calvin
Semiconductor Energy Laboratory Co,. Ltd.
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