Plasma CVD method

Details Plasma CVD method Plasma CVD method

1996-11-12

2000-01-18

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438482, 438485, 438514, 438585, 438486, 438479, 438151, 438149, 438166, 427569, 427579, H01L 2102

Patent

active

060157623

ABSTRACT:
In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O.sub.2 -plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

REFERENCES:
patent: 4917044 (1990-04-01), Yau et al.
patent: 5472825 (1995-12-01), Sayka
patent: 5571578 (1996-11-01), Kaji et al.

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