Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-08-01
2010-11-30
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S482000, C438S485000, C257S059000, C257S071000
Reexamination Certificate
active
07842586
ABSTRACT:
As an electrode area of a plasma CVD apparatus is enlarged, influence of the surface standing wave remarkably appears, and there is a problem in that in-plane uniformity of quality and a thickness of a thin film formed over a glass substrate is degraded. Two or more high-frequency electric powers with different frequencies are supplied to an electrode for producing glow discharge plasma in a reaction chamber. With glow discharge plasma produced by supplying the high-frequency electric powers with different frequencies, a semiconductor thin film or an insulating thin film is formed. High-frequency electric powers with different frequencies (different wavelengths), which are superimposed on each other, are applied to an electrode in a plasma CVD apparatus, so that increase in plasma density and uniformity for preventing effect of surface standing wave of plasma are attained.
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Dang Phuc T
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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