Plasma CVD apparatus and processes

Details Plasma CVD apparatus and processes Plasma CVD apparatus and processes

1992-01-15

1995-08-22

Breneman, R. Bruce

Etching a substrate: processes

Etching and coating occur in the same processing chamber

118715, 118724, 118733, 118723MB, 156345, 216 67, 216 79, H01L 2100

Patent

active

054436869

ABSTRACT:
Processes for producing and using a novel CVD apparatus for depositing silicon layers onto suitable substrates and for the in-situ etching removal of background silicon deposits from the interior walls of the apparatus. The invention comprises using an apparatus having a fused quartz reaction chamber and precoating the interior wall of the reaction chamber with a thin continuous barrier layer of Al.sub.2 O.sub.3 which is inert to the etching gas introduced for the removal of the background silicon deposits.

REFERENCES:
patent: 3517643 (1970-06-01), Goldstein et al.
patent: 3904501 (1975-09-01), Lagow et al.
patent: 4330932 (1982-05-01), Morris et al.
patent: 4430547 (1984-02-01), Yoneda et al.
patent: 4572759 (1986-02-01), Benzing
patent: 4750980 (1988-06-01), Hynecek
patent: 4786352 (1988-11-01), Benzing
patent: 4989540 (1991-02-01), Fuse et al.
patent: 5030319 (1991-07-01), Nishino et al.
IBM Tech. Disc. Bulletin, vol. 32, No. 2, Jul., 1989, p. 494, "Inorganic Growth of GaAs and GaAlAs".
Patent Abstracts of Japan, vol. 13, No. 479, Japanese Patent Appl. A-11 88678 (Mitsubishi) Jul. 27, 1989.
Patent Abstracts of Japan, vol. 12, No. 223, Japanese Patent Appl. A-63 020482 (Canon) Jan. 28, 1988.
Patent Abstracts of Japan, vol. 5, No. 15, Japanese Patent Appl. A-55 145338 (Shibaura) Nov. 12, 1980.
Patent Abstracts of Japan, vol. 6, No. 128, Japanese Patent Appl. A-57 053930 (Matsushita) Mar. 31, 1982.
Database WPI, Sect. Ch, Week 2480, Japanese Patent Appl. A-55 0597(Hitachi) May 7, 1980.

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