Plasma control using dual cathode frequency mixing and...

Details Plasma control using dual cathode frequency mixing and... Plasma control using dual cathode frequency mixing and...

2007-11-29

2010-06-15

Brewster, William M (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S014000, C438S394000

Reexamination Certificate

active

07736914

ABSTRACT:
Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.

REFERENCES:
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4585516 (1986-04-01), Corn et al.
patent: 4863549 (1989-09-01), Grunwald
patent: 5065118 (1991-11-01), Collins et al.
patent: 5077499 (1991-12-01), Oku
patent: 5512130 (1996-04-01), Barna et al.
patent: 5534751 (1996-07-01), Lenz et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5570031 (1996-10-01), Sasaki et al.
patent: 5643364 (1997-07-01), Zhao et al.
patent: 5698062 (1997-12-01), Sakamoto et al.
patent: 5817534 (1998-10-01), Ye et al.
patent: 5985375 (1999-11-01), Donohoe et al.
patent: 6089181 (2000-07-01), Suemasa et al.
patent: 6110287 (2000-08-01), Arai et al.
patent: 6113731 (2000-09-01), Shan et al.
patent: 6126778 (2000-10-01), Donohoe et al.
patent: 6190496 (2001-02-01), DeOrnellas et al.
patent: 6193855 (2001-02-01), Gopalraja et al.
patent: 6218309 (2001-04-01), Miller et al.
patent: 6309978 (2001-10-01), Donohoe et al.
patent: 6312556 (2001-11-01), Donohoe et al.
patent: 6350701 (2002-02-01), Yamazaki
patent: 6354240 (2002-03-01), DeOrnellas et al.
patent: 6411490 (2002-06-01), Dible
patent: 6433297 (2002-08-01), Kojima et al.
patent: 6642149 (2003-11-01), Suemasa et al.
patent: 6706138 (2004-03-01), Barnes et al.
patent: 6872281 (2005-03-01), Chen et al.
patent: 2002/0039626 (2002-04-01), Nakahigashi et al.
patent: 2002/0041160 (2002-04-01), Barnes et al.
patent: 2003/0127319 (2003-07-01), Demaray et al.
patent: 2003/0148611 (2003-08-01), Dhindsa et al.
patent: 2004/0025791 (2004-02-01), Chen et al.
patent: 2004/0045669 (2004-03-01), Okumura et al.
patent: 2004/0221958 (2004-11-01), Loewenhardt et al.
patent: 2004/0255863 (2004-12-01), Higashiura et al.
patent: 2005/0022933 (2005-02-01), Howard
patent: 2005/0241762 (2005-11-01), Paterson et al.
patent: 2008/0029385 (2008-02-01), Koshimizu et al.
patent: 0553704 (1993-08-01), None
patent: 08-306659 (1996-11-01), None
patent: 2002-246368 (2002-08-01), None
patent: 2003-073836 (2003-03-01), None
patent: WO-03/003405 (2003-01-01), None
patent: WO-03/043061 (2003-05-01), None
Georgieva, V., et al., “Numerical study of Ar/CF4/N2discharges in single- and dual-frequency capacitively coupled plasma reactors”,Journal of Applied Physics, vol. 94, No. 6 (Sep. 15, 2003), 3748-3756.
Lieberman, M. A., et al., “Standing wave and skin effects in large-area, high-frequency capacitive discharges”,Plasma Sources Sci. Technol., 11 (2002), 283-293.
International Search Report and Written Opinion mailed Feb. 25, 2009 for PCT Application No. PCT/US2008/084635.

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