Plasma control using dual cathode frequency mixing

Details Plasma control using dual cathode frequency mixing Plasma control using dual cathode frequency mixing

2004-04-12

2010-11-23

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S702000, C438S709000, C438S710000, C216S037000, C216S067000

Reexamination Certificate

active

07838430

ABSTRACT:
A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

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