Plasma contamination removal process

Electric heating – Metal heating – By arc

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

21912144, 156646, 156345, B23K 900

Patent

active

051986345

ABSTRACT:
A unique process for the removal of organic polymer photoresist and contaminants from the surface of substrates such as semiconductor wafers is disclosed. The process uses a preferred operating power to pressure ratio (where power is measured in watts per cm.sup.3 of plasma and pressure in torr) of less than about 0.150. Pressures of from 10 to 50 torr, and power input of from 200 to 500 watts per cathode can be used to minimize radiation damage to the substrate, and avoid the necessity of using remotely generated plasmas. Additionally, the process minimizes device contamination by post-strip residues (organic and/or inorganic), since only a deionized water rinse is required. Processing time is also reduced.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3705055 (1972-12-01), Christensen et al.
patent: 3837856 (1974-09-01), Irving et al.
patent: 3867216 (1975-02-01), Jacob
patent: 3879597 (1975-05-01), Bersin et al.
patent: 3951843 (1976-05-01), Jacob
patent: 4253907 (1981-03-01), Parry et al.
patent: 4304983 (1981-12-01), Pierfederici
patent: 4357203 (1982-11-01), Zelez
patent: 4370195 (1983-01-01), Halon et al.
patent: 4417948 (1983-11-01), Mayne-Banton et al.
patent: 4443409 (1984-05-01), Saccocio et al.
patent: 4474621 (1984-10-01), Saccocio et al.
patent: 4529860 (1985-07-01), Robb
patent: 4540466 (1985-09-01), Nishizawa
patent: 4555303 (1985-11-01), Legge et al.
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4687544 (1987-08-01), Bersin
patent: 4689112 (1987-08-01), Bersin
patent: 4699689 (1987-10-01), Bersin
patent: 4705595 (1987-11-01), Okudaira
patent: 4718974 (1988-01-01), Minaee
patent: 4718976 (1988-01-01), Fujimura
patent: 4736087 (1988-05-01), Whitlock et al.
patent: 4804431 (1989-02-01), Ribner
patent: 4812201 (1989-03-01), Sakai et al.
patent: 4836902 (1989-06-01), Kainitsky et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma contamination removal process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma contamination removal process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma contamination removal process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1282572

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.