Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2006-04-18
2006-04-18
Markoff, Alexander (Department: 1746)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S001000, C134S022100, C134S022180, C134S026000, C134S030000, C438S905000
Reexamination Certificate
active
07028696
ABSTRACT:
A method involving plasma cleaning of deposit residues in process chamber using duo-step wafer-less auto clean method is detailed. Specifically, the method involves cleaning the processing chamber by flowing a first gaseous composition with at least about 75% of fluorine-containing compound of the formula XyFz, into a processing chamber and then forming a first etchant plasma which removes silicon and silicon based byproducts from the interior surfaces of the processing chamber. The method then involves flowing a second gaseous composition into the processing chamber with a composition of at least about 50% O2and forming a plasma from the second gaseous composition to provide a second etchant plasma which removes carbon and carbon based byproducts from the interior surfaces of the processing chamber. A system configured to execute the two step cleaning process is also provided.
REFERENCES:
patent: 5620526 (1997-04-01), Watatani et al.
patent: 5647953 (1997-07-01), Williams et al.
patent: 5843239 (1998-12-01), Shrotriya
patent: 5846373 (1998-12-01), Pirkle et al.
patent: 5935340 (1999-08-01), Xia et al.
patent: 6125859 (2000-10-01), Kao et al.
patent: 0 933 803 (1999-08-01), None
patent: 0 933 806 (1999-08-01), None
Richardson Brett C.
Wong Vincent
Lam Research Corporation
Markoff Alexander
Martine & Penilla & Gencarella LLP
LandOfFree
Plasma cleaning of deposition chamber residues using... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma cleaning of deposition chamber residues using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma cleaning of deposition chamber residues using... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3574314