Plasma-assisted sputter deposition system

Details Plasma-assisted sputter deposition system Plasma-assisted sputter deposition system

2005-01-11

2009-12-01

Nguyen, Nam X (Department: 1795)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S298200, C204S298180, C204S298280

Reexamination Certificate

active

07625472

ABSTRACT:
A plasma-assisted sputter deposition system includes a reactor1into which a process gas is introduced; a doughnut-shaped electrode to be sputtered by plasma, in which a lower surface thereof is angled to a surface of a wafer; a spinning plate that spin on its central axis while moving over a circle above the doughnut-shaped electrode, in which the spinning plate contains magnet arrangement; an electrical power sources connected to the doughnut-shaped electrode, and a wafer holder for placing a wafer for film deposition, which is at rest during the film deposition.

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British Search Report Application No. GB 0500118.5, dated Apr. 12, 2005.
English language translation of a Japanese Office Action received on Aug. 21, 2009 in corresponding Japanese Patent Application No. 2004-099398.

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