Plasma assisted deposition system

Details Plasma assisted deposition system Plasma assisted deposition system

1982-02-18

1984-03-27

Hoffman, James R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 41, 427 86, 427 87, C23C 1100

Patent

active

044394632

ABSTRACT:
Process for use in the deposition of a semiconductor film involves: producing a stream of reactive gaseous species within a first chamber, the reactive species containing a substance to be included within the film; passing the reactive species to a work environment distinct from the first chamber; and incorporating the substance from the reactive species into a film deposited within the work environment.

REFERENCES:
patent: 3961103 (1976-06-01), Aisenberg

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