Method of increasing capacitance by surface roughening in semico

Details Method of increasing capacitance by surface roughening in semico Method of increasing capacitance by surface roughening in semico

1995-06-19

1997-01-07

Fourson, George

Fishing, trapping, and vermin destroying

437233, 437919, 437977, 437 52, 437 60, H01C 2128

Patent

active

RE0354201

ABSTRACT:
A method of increasing capacitance by surface roughening in semiconductor wafer processing includes the following steps: a) applying a first layer of material atop a substrate thereby defining an exposed surface; b) incontinuously adhering discrete solid particles to the first layer exposed surface to roughen the exposed surface; and c) applying a second layer of material atop the first layer and adhered solid particles to define an outer surface, the particles adhered to the first layer reducing roughness into the outer surface thereby increasing its surface area and accordingly capacitance of the second layer in the final wafer structure.

REFERENCES:
patent: 5017505 (1991-05-01), Fujii et al.
patent: 5037773 (1991-08-01), Lee et al.
patent: 5068199 (1991-11-01), Sandhu
patent: 5082797 (1992-01-01), Chan et al.
patent: 5102832 (1992-04-01), Tuttle
patent: 5112773 (1992-05-01), Tuttle
patent: 5134086 (1992-07-01), Ahn
patent: 5149676 (1992-09-01), Kim et al.

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