Plasma-assisted CVD of carbonaceous films by using a bias voltag

Details Plasma-assisted CVD of carbonaceous films by using a bias voltag Plasma-assisted CVD of carbonaceous films by using a bias voltag

1991-07-01

1993-07-27

King, Roy

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427577, 427575, 427571, 427249, 427122, 423446, B05D 306

Patent

active

052309312

ABSTRACT:
Diamond films or I-Carbon films can be formed on a surface of an object by virtue of plasma-assisted chemical vapor deposition. The hardness of the films can be enhanced by applying a bias voltage to the object during deposition.

REFERENCES:
patent: 4486462 (1984-12-01), Asahi et al.
patent: 4576830 (1986-03-01), Kiss
patent: 4616597 (1986-10-01), Kaganowicz
patent: 4663183 (1987-05-01), Ovshinsky et al.
patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 4971667 (1990-11-01), Yamazaki et al.
patent: 4987005 (1991-01-01), Suzuki et al.

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