Plasma ashing method with oxygen pretreatment

Details Plasma ashing method with oxygen pretreatment Plasma ashing method with oxygen pretreatment

1994-11-30

1996-10-01

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 216 69, H05H 100, H01L 2100

Patent

active

055608035

ABSTRACT:
A method for ashing a resist on a wafer in a plasma reaction chamber comprises the steps of flowing a non-activated oxygen containing gas into the plasma reaction chamber immediately before loading the wafer to the plasma reaction chamber, and then carrying out a plasma ashing of the resist. In one of the preferred embodiments, after the reaction chamber was exposed to the atmosphere and then evacuated to vacuum, a mixed gas of oxygen (90% in volume) and water vapor (10% in volume) was flown into the reaction chamber with 1000 seem and 1 Torr for 5 min. and subsequently the ashing was carried out. The method prevents the ashing rate from decreasing with ashing time.

REFERENCES:
patent: 4689112 (1987-08-01), Bersin
patent: 4961820 (1990-10-01), Shinagawa et al.
patent: 5294292 (1994-03-01), Yamashita et al.
patent: 5298112 (1994-03-01), Hayasaka et al.

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