Plasma apparatus and production method thereof

Details Plasma apparatus and production method thereof Plasma apparatus and production method thereof

2007-12-04

2007-12-04

Hassanzadeh, Parviz (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

C118S7230AN, C156S345410

Reexamination Certificate

active

10467821

ABSTRACT:
A plasma apparatus includes a container (11) having an opening, a dielectric member (13) supported by an end surface of an outer periphery of the opening of the container (11), an electromagnetic field supplying means for supplying an electromagnetic field into the container (11) through the dielectric member (13), and a shield member (12) covering the outer periphery of the dielectric member (13) and shielding the electromagnetic field. A distance L1from an inner surface of the container (11) to an inner surface of the shield member (12) at an end surface of the container (11) is approximately N/2 (N is an integer not smaller than 0) times the wavelength of the electromagnetic field in an area (18) surrounded by the end surface of the container (11), the electromagnetic field supplying means and the shield member (12).

REFERENCES:
patent: 4785763 (1988-11-01), Saitoh
patent: 4985109 (1991-01-01), Otsubo et al.
patent: 5556475 (1996-09-01), Besen et al.
patent: 5587205 (1996-12-01), Hiroshi et al.
patent: 6364958 (2002-04-01), Lai et al.
patent: 2002/0066536 (2002-06-01), Hongoh et al.
patent: 1315201 (2003-05-01), None
patent: 7-335631 (1995-12-01), None
patent: 10-199698 (1998-07-01), None
patent: 11-67492 (1999-03-01), None
patent: 11-195500 (1999-07-01), None
patent: 11-340204 (1999-12-01), None
European Search Report dated Jan. 24, 2006 (Six (6) Pages).

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