Etching a substrate: processes – Planarizing a nonplanar surface
Patent
1997-12-05
2000-02-15
Nguyen, Nam
Etching a substrate: processes
Planarizing a nonplanar surface
216 22, 216 41, 216 66, 430313, 430319, 430320, 2960307, 2960316, 2960318, B44C 122
Patent
active
060248866
ABSTRACT:
Within a method for forming a magnetic transducer head there is first provided a substrate having formed thereover a lower magnetic pole layer in turn having formed thereupon a gap filling layer which is substantially planar. There is then formed upon the gap filling layer a patterned upper magnetic pole tip layer which serves as an etch mask layer for forming from the gap filling layer and the lower magnetic pole layer a patterned gap filling layer and an etched lower magnetic pole layer having a lower magnetic pole tip integral thereto, while simultaneously forming an etched patterned upper magnetic pole tip layer from the patterned upper magnetic pole tip layer. There is then formed upon the etched patterned upper magnetic pole tip layer and the etched lower magnetic pole layer a backfilling insulator layer to a thickness greater than a thickness of the etched patterned upper magnetic pole tip layer plus a thickness of the patterned gap filling layer plus a thickness of the lower magnetic pole tip. There is then planarized the backfilling insulator layer to form a patterned planarized backfilling insulator layer an exposed upper surface of which is coplanar with an exposed upper surface of the etched patterned upper magnetic pole tip layer. Finally, there is then formed a patterned upper magnetic pole layer contacting the exposed upper surface of the etched patterned upper magnetic pole tip layer.
REFERENCES:
patent: 5285340 (1994-02-01), Ju et al.
patent: 5438747 (1995-08-01), Krounbi et al.
patent: 5452164 (1995-09-01), Cole et al.
patent: 5536202 (1996-07-01), Appel et al.
patent: 5649351 (1997-07-01), Cole et al.
patent: 5901431 (1999-05-01), Santini
patent: 5901432 (1999-05-01), Armstrong et al.
Feng Yongchang
Han Cherng-Chyi
Lee Rodney E.
Wang Hui-Chuan
Ackerman Stephen B.
Headway Technologies Inc.
Nguyen Nam
Saile George O.
Szecsy Alek P.
LandOfFree
Planarizing method for fabricating an inductive magnetic write h does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Planarizing method for fabricating an inductive magnetic write h, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planarizing method for fabricating an inductive magnetic write h will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1903145