Planarizing ladder-type silsequioxane polymer insulation layer

Details Planarizing ladder-type silsequioxane polymer insulation layer Planarizing ladder-type silsequioxane polymer insulation layer

1992-07-30

1994-02-15

Thibodeau, Paul J.

Stock material or miscellaneous articles

Composite

Of silicon containing

428429, 428448, 528 10, 528 38, 528 43, 257 40, B32B 904

Patent

active

052865720

ABSTRACT:
An improved insulation layer is formed by first preparing a solution by reacting water with an aminoalkoxysilane monomer in a solvent, using a critical mole ratio of water/monomer. After a sufficient aging period, the solution is coated onto a suitable surface, e.g. the surface of a semiconductor device, and then cured, in an essentially oxygen-free atmosphere, to a ladder-type silsesquioxane polymer. The insulation layer demonstrates excellent planarizing characteristics, while also exhibiting enhanced crack-resistance.

REFERENCES:
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patent: 4529752 (1985-07-01), Bluestein
patent: 4702990 (1987-10-01), Tanaka et al.
Roberts, E. D., "The Preparation and Properties of a Polysiloxane Electron Resist", J. Electrochem. Soc.: Solid-State Science and Tech., vol. 120, No. 12, Dec. 1973, pp. 1716-1721.
Flitsch, F. et al. "Planar Quartz-Polysiloxane Composite Insulator", IBM Tech. Discl. Bull., vol. 27, No. 7B, Dec. 1984, pp. 4267-4268.
Clodgo, D. J. et al, "Polysiloxane Dielectric For Multi-Level Metal", IBM Tech. Discl. Bull., vol. 28, No. 12, May 1986, p. 5246.
Babich, E. D. et al, "Radiation-Curable Polysiloxanes", IBM Tech. Discl. Bull., vol. 30, No. 3, Aug. 1987, pp. 1041-1042.

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