Planarizing contact etch

Details Planarizing contact etch Planarizing contact etch

1989-08-03

1990-07-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437235, 437981, 148DIG51, 148DIG131, 156643, 156644, 156646, H01L 2100, H01L 2102, H01L 21283, H01L 21302

Patent

active

049391054

ABSTRACT:
The present invention is a contact etch method which simultaneously smoothes a reflowed oxide profile so that separate phanarization photoresist coat and etch steps are unnecessary. This method is characterized in that it is fast, uses only one photoresist mask layer, etches contacts to poly and to substrate simultaneously, is done entirely with plasma etch technology in a single reactor, and builds up less polymer in the plasma reactor. The novel method eliminates a coat and an etch step, improving yield and reducing fabrication time. Lower polymer buildup means higher yields due to a cleaner process, and less downtime for reactor chamber cleaning.

REFERENCES:
patent: 4520041 (1985-05-01), Aoyama et al.
Sze, S., VLSI Technology, pp. 317-321, McGraw-Hill, 1983.

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