Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-08-16
2011-08-16
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S424000, C438S697000, C438S954000
Reexamination Certificate
active
07998831
ABSTRACT:
A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.
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patent: 2008/0081411 (2008-04-01), Cho et al.
Kim In Ki
Kim Min Hwan
Lim Sin Leng
Lu Wei
Park Jong Sung
Globalfoundries Singapore Pte. Ltd.
Horizon IP Pte Ltd
Parker John M
Smith Matthew
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