Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-12-01
1995-11-07
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257513, 257519, 257635, 257638, H01L 2900, H01L 2358
Patent
active
054650038
ABSTRACT:
A new planarized device isolation structure within a semiconductor substrate is described. The device isolation structure comprises narrow device isolation regions each consisting of a deep trench having a thin oxide covering its sidewalls and bottom and filled with silicon oxide, wide device isolation regions each consisting of two deep trenches flanking a shallow trench wherein each deep trench has a thin oxide covering its sidewalls and bottom and is filled with silicon oxide and wherein the shallow trench is filled with a field oxide. The top surface of the narrow and wide device isolation regions and the semiconductor substrate is planarized.
REFERENCES:
patent: 4211582 (1980-07-01), Horng et al.
patent: 4656497 (1987-04-01), Rogers et al.
patent: 4836885 (1989-06-01), Breiten et al.
patent: 4868136 (1989-09-01), Ravaglia
patent: 4876216 (1989-10-01), Tobiao et al.
patent: 4988639 (1991-01-01), Aomura
patent: 5017999 (1991-05-01), Roisen et al.
patent: 5096848 (1992-03-01), Kawamura
patent: 5108946 (1992-04-01), Zdebel et al.
patent: 5130268 (1992-07-01), Liou et al.
patent: 5350941 (1994-09-01), Madan
VLSI Technology, International Edition, by Sinsze McGraw-Hill Book Co, NY N.Y. .COPYRGT.1988, by McGraw-Hill Book Co, pp. 473-474, 476-477.
"Formation of Silicon Nitride at Si-SiO.sub.2 Interface during Local Oxidation and during Heat-Treatment of Oxidized Silicon in NH.sub.3 Gas" by E. Kooi, .
J. G. van Lierop & J. A. Appeals, J. Electrochem Soc. Solid-State Science and Technology, Jul. 1976, pp. 1117-1120.
Lur Water
Shen Neng H.
Su Anna
Loke Steven H.
Pike Rosemary L. S.
Saile George O.
United Microelectronics Corporation
LandOfFree
Planarized local oxidation by trench-around technology does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Planarized local oxidation by trench-around technology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planarized local oxidation by trench-around technology will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-198682