Planarized dielectric deposited using plasma enhanced chemical v

Details Planarized dielectric deposited using plasma enhanced chemical v Planarized dielectric deposited using plasma enhanced chemical v

1986-03-06

1987-07-21

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156DIG89, 204164, 427 39, C30B 2506

Patent

active

046816534

ABSTRACT:
Deposition in an RIE type plasma reactor of interlevel oxide at high power and low pressure yielding a topography similar to reflowed PSG is disclosed. Deposition rates and film purity are limited by purity and the rate of flow of reactant gases through the plasma reactor and not by the thermal conductivity and expansion properties of quartz as in bias sputtering.

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C. Y. Ting et al., Study of Planarized Sputter-Deposited SiO.sub.2, J. Vac. Sci. Technol., 15(3) May/Jun. 1978, pp. 1105-1112.
J. L. Vossen et al, Processes for Multilevel Metalization, J. Vac. Sci. Technol., vol. 11, No. 1, Jan./Feb. 1974, pp. 60-68.
M. J. Nobles et al, The Equilibrium Topography of Sputtered Amorphous Solids, Journal of Materials Science 4 (1969) 730-733.

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